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9789810232863

Silicon Surfaces and Formation of Interfaces : Basic Science in the Industrial World

by ;
  • ISBN13:

    9789810232863

  • ISBN10:

    9810232861

  • Format: Hardcover
  • Copyright: 2000-09-01
  • Publisher: WORLD SCIENTIFIC PUB CO INC
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Summary

Silicon, the basic material for a multibillion-dollar industry, is the most widely researched and applied semiconductor, and its surfaces are the most thoroughly studied of all semiconductor surfaces. Silicon Surfaces and Formation of Interfaces may be used as an introduction to graduate-level physics and chemical physics. Moreover, it gives a specialized and comprehensive description of the most common faces of silicon crystals as well as their interaction with adsorbates and overlayers. This knowledge is presented in a systematic and easy-to-follow way. Discussion of each system is preceded by a brief overview which categorizes the features and physical mechanisms before the details are presented. The literature is easily available, and the references am numerous and organized in tables, allowing a search without the need to browse through the text.Though this volume focuses on a scientific understanding of physics on the atomistic and mesoscopic levels, it also highlights existing and potential links between basic research in surface science and applications in the silicon industry. It will be valuable to anyone writing a paper, thesis, or proposal in the field of silicon surfaces.

Table of Contents

Preface vii
Fundamental Concepts and Methods
1(81)
Introduction
1(2)
The Silicon Age
3(11)
The omnipresent silicon
4(3)
The MOS technology
7(7)
Methods of Modern Surface Science
14(31)
Theoretical techniques
15(13)
Experimental techniques
28(17)
Silicon Surfaces and Interfaces
45(22)
Fundamental concepts
46(7)
Free surfaces
53(12)
Buried interfaces
65(2)
Primary Silicon Surfaces and Their Vicinals
67(15)
Structures of Si(001)
68(1)
Structures of Si(111)
69(4)
Si(11n) surfaces
73(1)
Structures of Si(113)
74(4)
Structures of Si(110)
78(4)
The Famous Reconstruction of Si(001)
82(45)
Introduction
82(5)
Overview: expectations bias our predictions
84(3)
Pre-STM Era: Groping through the Dark
87(20)
Early observations and models
88(5)
Dimers, chains, vacancies, or maybe something else?
93(6)
The mysterious fourfold periodicity strikes back
99(1)
Buckling of dimers
100(2)
Simple models lose some credit
102(5)
To Buckle or Not to Buckle?
107(10)
The first group photo of dimers
107(2)
Electronic structure attracts more attention
109(3)
Seeing is believing
112(3)
The sobering variety of opinions
115(2)
A Clear Picture Finally Emerges
117(5)
Reconciliations
117(3)
Completing the picture
120(2)
Conclusions and Summary
122(5)
What did we learn
122(2)
What is still missing
124(3)
Geometries of Clean Si(001)
127(78)
Introduction
127(3)
Perfect Si(001)
130(25)
The {001}-truncated bulk
131(2)
Atomic structures
133(9)
Electronic structures
142(13)
Surface Defects
155(39)
Point defects
155(16)
Surface steps and vicinal Si(001)
171(23)
Metastable Structures
194(11)
Si(001) 2 x n
194(4)
Si(001) c(4 x 4)
198(3)
Translational domain boundaries
201(4)
Evolution of Clean Si(001)
205(57)
Introduction
205(1)
Surface Diffusion
206(31)
Isolated mobile objects on clean Si(001)
207(9)
Interactions between mobile objects on Si(001)
216(6)
Interactions between mobile objects and Si(001) steps
222(15)
Surface Vibrations and Phase Transitions
237(19)
Surface transitions on the flat Si(001)
238(11)
Vicinal Si(001): phase transitions, interaction of steps
249(7)
Deposition and Sublimation of Si
256(6)
Adsorption on Silicon Surfaces
262(82)
Introduction
262(2)
Hydrogen: Passivation and Etching
264(13)
Hydrogen adsorption, etching, and structures on Si(001)
265(4)
Desorption of hydrogen and buckling of dimers
269(6)
Hydrogen and epitaxial growth
275(2)
Halogens: Etching
277(9)
Fluorine and hydrofluoric acid
278(4)
Chlorine, bromine and iodine
282(4)
Oxygen: Isolation and Protection
286(10)
Oxygen and its bonds with silicon
288(1)
Adsorption of O2 on Si(001)
289(1)
Adsorption sites of atomic oxygen on Si(001)
290(4)
Active etching and passive oxidation
294(2)
Water: UHV Pest and a Renowned Oxidant
296(12)
Water, ice, and hydrogen bonds
298(3)
Adsorption and dissociation of water
301(3)
Oxidation and etching by water
304(4)
Nitrogen: a Hope for a Better Gate Dielectric
308(14)
Nitrogen, silicon nitride, and related materials
311(3)
Adsorption of nitrogen-containing molecules
314(4)
Nitridation of silicon
318(4)
Transition Metals: Contacts, Dielectrics, Impurities
322(22)
Transition metal silicides on silicon
324(11)
Nickel on silicon surfaces
335(4)
Titanium on Si(001)
339(2)
Transition metal oxides: new gate dielectrics?
341(3)
On the Road to Devices: SiO2/Si(001)
344(101)
Introduction
344(2)
Silicon Dioxide in Nature and Technology
346(11)
Silicon dioxide, SiO2
348(4)
SiO2/Si(001): MOS technology views and limits
352(5)
Preparation of Oxide Films
357(23)
Native oxides and oxidation by chemical etch
359(3)
Thermal oxidation
362(4)
Growth by deposition
366(1)
Nitridation and oxynitridation
367(5)
Silicon dioxide film morphology
372(3)
Post-oxidation treatments
375(2)
Isolation techniques
377(3)
Models of Thermal Oxidation
380(11)
Deal-Grove model of growth rate
382(2)
Beyond the Deal-Grove model
384(7)
Formation and Structures of SiO2/Si Interfaces
391(38)
Interface formation: a simple analysis
394(4)
Atomic structures of SiO2/Si(001)
398(8)
Electronic states in the gap
406(2)
Oxide defects and growth of the oxide
408(4)
Reactions at the interface and in the oxide film
412(17)
Practical Quality Issues of SiO2/Si
429(16)
Experimental access
429(1)
Influence on device parameters
430(15)
Afterword
445(18)
Do We Need an Afterword?
445(1)
A Glance Behind
446(1)
Fundamental Science in a Commercial World
447(11)
The dangers of commercialization
448(1)
Can science be saved?
449(1)
Science for technology
450(2)
Science for all
452(6)
How Can Silicon Surfaces Contribute?
458(2)
Overview and Summary
460(3)
References 463(44)
Author Index 507(26)
Subject Index 533

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